 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| EIA1114-2 UPDATED 07/25/2006 11.0-14.0GHz 2-Watt Internally Matched Power FET FEATURES * * * * * * * * 11.0- 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. Excelics EIA1114-2 YYWW SN .094 .382 .060 MIN. .650.008 .512 GATE .319 DRAIN .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ 750mA Gain at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ 750mA Gain Flatness f = 11.0-14.0GHz VDS = 8 V, IDSQ 750mA Power Added Efficiency at 1dB Compression f = 11.0-14.0GHz VDS = 8 V, IDSQ 750mA Drain Current at 1dB Compression f = 11.0-14.0GHz Caution! ESD sensitive device. MIN 32.5 6.0 TYP 33.5 7.0 MAX UNITS dBm dB 0.8 25 850 -36 1440 -1.0 11.0 1800 -2.5 12.0 o dB % 1000 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2 VDS = 8 V, IDSQ 65% IDSS f = 14.0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 15 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10 -5 21.6mA -3.6mA 32.5dBm o 175 C o -65 to +175 C CONTINUOUS2 8V -3V 7.2mA -1.2mA @ 3dB Compression 175 oC -65 to +175 oC 12W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 12W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised July 2006 |
Price & Availability of EIA1114-2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |